A new family of full-bridge power modules from SemiQ is based on its QSiC 1200-V SiC MOSFETs. The modules deliver near zero switching loss, significantly improving efficiency and reducing heat dissipation, as well as enabling the use of smaller heatsinks.
The compact modules also offer a straightforward thermal interface that can help simplify the design of solar inverters, EV chargers, and other high-power applications. In solar inverter applications, SemiQ’s technology empowers designers to achieve greater efficiency—reaching as high as 98%—and more compact designs.
With a high breakdown voltage exceeding 1400 V, the QSiC modules in full-bridge configurations withstand high-temperature operation at Tj = 175°C with minimal RDS(on) shift across the entire temperature spectrum. Crafted from high-performance ceramics, SemiQ’s modules achieve exceptional performance levels, increased power density, and more compact designs, especially in high-frequency and high-power environments frequently found in solar inverters, drives and chargers for electric vehicles, DC-DC converters, and power supplies.
To guarantee a stable gate-threshold voltage and premium gate-oxide quality for each module, SemiQ conducts gate burn-in testing at the wafer level. In addition to the burn-in test, which contributes to mitigating extrinsic failure rates, various stress tests—including gate stress, high-temperature reverse-bias (HTRB) drain stress, and high humidity, high voltage, high temperature (H3TRB)—are employed to attain the necessary automotive- and industrial-grade quality standards. The devices also offer extended short-circuit ratings, and all parts have undergone testing surpassing 1,400 V.
SemiQ’s new 1200-V modules in full-bridge packages are available in 20-, 40-, and 80-mΩ SiC MOSFETs categories. The table below shows the part numbers.
